Source: APPLIED PHYSICS LETTERS. Unidade: IF
Subjects: EPITAXIA POR FEIXE MOLECULAR, FÍSICA DA MATÉRIA CONDENSADA
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KEIZER, J. G et al. Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing. APPLIED PHYSICS LETTERS, v. 101 24, p. 243113, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4770371. Acesso em: 27 abr. 2024.APA
Keizer, J. G., Henriques, A. B., Maia, A. D. B., Quivy, A. A., & Koenraad, P. M. (2012). Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing. APPLIED PHYSICS LETTERS, 101 24, 243113. doi:10.1063/1.4770371NLM
Keizer JG, Henriques AB, Maia ADB, Quivy AA, Koenraad PM. Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing [Internet]. APPLIED PHYSICS LETTERS. 2012 ;101 24 243113.[citado 2024 abr. 27 ] Available from: https://doi.org/10.1063/1.4770371Vancouver
Keizer JG, Henriques AB, Maia ADB, Quivy AA, Koenraad PM. Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing [Internet]. APPLIED PHYSICS LETTERS. 2012 ;101 24 243113.[citado 2024 abr. 27 ] Available from: https://doi.org/10.1063/1.4770371
